Metallic-semiconducting transition of silicon nanowires by surface passivation

Surface passivation is one of the best techniques to eliminate the adverse effects of the dangling bonds present in the simple nanostructures and modify their electronic property. In this work, the metallic-to-semiconducting transition of silicon nanowires (SiNWs) by surface passivation has been inv...

Täydet tiedot

Bibliografiset tiedot

Päätekijä:	Devi Dass
Aineistotyyppi:	Artigo
Kieli:	Inglês
Julkaistu:	Elsevier 2021-05-01
Sarja:	Results in Surfaces and Interfaces
Aiheet:	Silicon nanowire (SiNW) Surface passivation Band gap Electronic property Orientation
Linkit:	http://www.sciencedirect.com/science/article/pii/S2666845921000088
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