Study on Total Ionize Dose Irradiation Damages of Silicon Epitaxial Planar NPN Bipolar Transistor
In this paper, the total ionize dose (TID) irradiations for NPN bipolar transistors were carried out by 60Co γ rays. Obvious degradations were observed after irradiation, which are manifested as the increase of base current and the decrease of current gain. A more obvious increase of base current w...
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| Formato: | Artigo |
| Idioma: | Inglês |
| Publicado: |
Editorial Board of Atomic Energy Science and Technology
2022-10-01
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| Series: | Yuanzineng kexue jishu |
| Assuntos: | |
| Acceso en liña: | https://www.aest.org.cn/CN/abstract/abstract21583.shtml |
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