Reduction of the Threading Dislocation Density in GaSb Layers Grown on Si(001) by Molecular Beam Epitaxy

Abstract The monolithic integration of III‐V semiconductors on Si emerges as a promising approach for realizing photonic integrated circuits. However, the performance and reliability of epitaxially grown devices on Si are hampered by the threading dislocation density (TDD) generated during the growt...

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Hlavní autoři:	A. Gilbert, K. Graser, M. Ramonda, A. Trampert, J.‐B. Rodriguez, E. Tournié
Médium:	Artigo
Jazyk:	Inglês
Vydáno:	Wiley-VCH 2025-04-01
Edice:	Advanced Physics Research
Témata:	defect reduction layer heteroepitaxy interfacial misfit network silicon threading dislocations
On-line přístup:	https://doi.org/10.1002/apxr.202400126
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