Machine Learning (ML)-Based Model to Characterize the Line Edge Roughness (LER)-Induced Random Variation in FinFET

ML (Machine Learning)-based artificial neural network (ANN) model is proposed to estimate the LER (line edge roughness)-induced performance variation in Fin-shaped Field Effect Transistor (FinFET). For a given LER features such as rms amplitude(&#x0394;), correlation length along x-direction (A<sub>...

Descripció completa

Dades bibliogràfiques

Autors principals:	Jaehyuk Lim, Changhwan Shin
Format:	Artigo
Idioma:	Inglês
Publicat:	IEEE 2020-01-01
Col·lecció:	IEEE Access
Matèries:	Line edge roughness process-induced random variation FinFET machine learning artificial neural network
Accés en línia:	https://ieeexplore.ieee.org/document/9179808/
Etiquetes:	Afegir etiqueta Sense etiquetes, Sigues el primer a etiquetar aquest registre!