Numerical Analysis of the Dislocation Density in Multicrystalline Silicon for Solar Cells by the Vertical Bridgman Process
We studied the effects of cooling process on the generation of dislocations in multicrystalline silicon grown by the vertical Bridgman process. From the temperature field obtained by a global model, the stress relaxation and multiplication of dislocations were calculated using the Haasen-Alexander-S...
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| Автори: | , , , , , , |
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| Формат: | Artigo |
| Мова: | Inglês |
| Опубліковано: |
Wiley
2013-01-01
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| Серія: | International Journal of Photoenergy |
| Онлайн доступ: | http://dx.doi.org/10.1155/2013/706923 |
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