Damage Effect of ALD-Al<sub>2</sub>O<sub>3</sub> Based Metal-Oxide-Semiconductor Structures under Gamma-Ray Irradiation
The radiation response of Al<sub>2</sub>O<sub>3</sub> on silicon substrate under gamma-rays is studied in this article. The atomic layer deposited Al<sub>2</sub>O<sub>3</sub> based metal-oxide-semiconductor structures were irradiated under gamma-ray with the total dose of 1.2 Mrad(Si)/2.5 Mrad(Si)/4...
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| Formato: | Artigo |
| Idioma: | Inglês |
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MDPI AG
2021-06-01
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| Series: | Micromachines |
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| Acceso en liña: | https://www.mdpi.com/2072-666X/12/6/661 |
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