Investigating the optical degradation of InAs quantum dot lasers on silicon through combined electro-optical characterization and gain measurements

We evaluate the degradation of 1.3 µ m InAs quantum-dot laser diodes epitaxially grown on silicon. For the first time, the optical degradation mechanisms are investigated by evaluating the variations in the gain spectra measured during a constant-current stress test. Remarkably, the gain spectra sho...

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Autori principali:	Michele Zenari, Marco Novarese, Matteo Buffolo, Carlo De Santi, Justin Norman, Eamonn T Hughes, John E Bowers, Robert W Herrick, Mariangela Gioannini, Gaudenzio Meneghesso, Enrico Zanoni, Matteo Meneghini
Natura:	Artigo
Lingua:	Inglês
Pubblicazione:	IOP Publishing 2025-01-01
Serie:	JPhys Photonics
Soggetti:	degradation quantum-dot laser gain spectra modeling
Accesso online:	https://doi.org/10.1088/2515-7647/adb4b4
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