Channel Design Optimization for 1.2-kV 4H-SiC MOSFET Achieving Inherent Unipolar Diode 3<sup>rd</sup> Quadrant Operation
SiC Schottky Barrier Diodes (SBDs) have been used in parallel with SiC MOSFETs as a freewheeling diode in power converter applications because the inherent PN body diode of the MOSFET has relatively high forward voltage drop, considerable reverse recovery current, and suffers from the expansion of s...
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| Автори: | , , , , |
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| Формат: | Artigo |
| Мова: | Inglês |
| Опубліковано: |
IEEE
2022-01-01
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| Серія: | IEEE Journal of the Electron Devices Society |
| Предмети: | |
| Онлайн доступ: | https://ieeexplore.ieee.org/document/9803024/ |
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