Transparent and High-Performance Extended Gate Ion-Sensitive Field-Effect Transistors Using Electrospun Indium Tin Oxide Nanofibers
Herein, we propose a transparent high-performance extended-gate ion-sensitive field-effect transistor (EG-ISFET) using an electrospun indium-tin-oxide (ITO) nanofiber sensing membrane with a high specific surface area. Electrospinning is a simple and effective technique for forming nanofibers. Never...
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| Autori principali: | , |
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| Natura: | Artigo |
| Lingua: | Inglês |
| Pubblicazione: |
MDPI AG
2023-05-01
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| Serie: | Chemosensors |
| Soggetti: | |
| Accesso online: | https://www.mdpi.com/2227-9040/11/6/319 |
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