Single-event transient analysis on radiation-hardened SiGe and GaN ringfet’s using 3D TCAD simulations

Abstract The ringFET devices are investigated for radiation-hardened applications employing advanced semiconductor materials such as SiGe and GaN by conducting 3D TCAD simulations. The most susceptible regions of SiGe and GaN ringFETs are determined by single-event transient (SET) analysis using the...

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Үндсэн зохиолчид:	M. Ramya, K. K. Nagarajan, R. Binowesley, A. J. Bhuvaneshwari, P. Kaythry, K. J. Jegadish Kumar, R. Vinu, C. Parthasarathy, S. Gomathi
Формат:	Artigo
Хэл сонгох:	Inglês
Хэвлэсэн:	Springer 2026-03-01
Цуврал:	Discover Materials
Нөхцлүүд:	ringFET Single event transient Technology computer aided design Linear energy transfer Inverter
Онлайн хандалт:	https://doi.org/10.1007/s43939-026-00592-9
Шошгууд:	Шошго нэмэх Шошго байхгүй, Энэхүү баримтыг шошголох эхний хүн болох!