Barrier Height, Ideality Factor and Role of Inhomogeneities at the AlGaN/GaN Interface in GaN Nanowire Wrap-Gate Transistor

It is essential to understand the barrier height, ideality factor, and role of inhomogeneities at the metal/semiconductor interfaces in nanowires for the development of next generation nanoscale devices. Here, we investigate the drain current (<i>I</i>_ds)–gate voltage (<i>V</i><sub>gs</su...

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Hlavní autoři:	Siva Pratap Reddy Mallem, Peddathimula Puneetha, Yeojin Choi, Seung Mun Baek, Dong-Yeon Lee, Ki-Sik Im, Sung Jin An
Médium:	Artigo
Jazyk:	Inglês
Vydáno:	MDPI AG 2023-12-01
Edice:	Nanomaterials
Témata:	wrap-gate transistor nanowire GaN barrier height inhomogeneities
On-line přístup:	https://www.mdpi.com/2079-4991/13/24/3159
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