Importance of $\Delta V_{{\text {DIBLSS}}}/({I}_{{\text {on}}} /{I}_{{\text {off}}})$ in Evaluating the Performance of n-Channel Bulk FinFET Devices

This paper aims to investigate the recently proposed figure of merit, ΔV_DIBLSS/(I_on/I_off), in detail. Experimental results show that ΔV_DIBLSS/(I_on/I_off) represents the index of device immunity to short-channel effects in...

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Hlavní autoři:	Yi-Chuen Eng, Luke Hu, Tzu-Feng Chang, Steven Hsu, Chun Mao Chiou, Ted Wang, Chih-Wei Yang, Osbert Cheng, Chih-Yi Wang, C. S. Tseng, Ren Huang, Po-Hsieh Lin, Kuan-Yu Lu, I-Fan Chang, Chi-Ju Lee, Yen-Liang Wu, Mike Chang
Médium:	Artigo
Jazyk:	Inglês
Vydáno:	IEEE 2018-01-01
Edice:	IEEE Journal of the Electron Devices Society
Témata:	ΔVDIBLSS/(Ion/Ioff) bulk FinFETs drain–induced barrier lowering short–channel effects subthreshold swing
On-line přístup:	https://ieeexplore.ieee.org/document/8247186/
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