Post Thermal Oxidation of Tin Thin Film on Silicon Substrate for MIS Hetrojunction Prepared by Thermal Evaporation
In this work, preparation of high quality conductive oxide SnO2 thin film by post-thermal trearment of deposited tin by vacuum thermal evaporation on glass and p -type silicon substratesfor preparation of metal-insulator-semiconductor hetrojunction. The opticalabsorption, electrical, structural and...
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| Format: | Artigo |
| Idioma: | Inglês |
| Publicat: |
Unviversity of Technology- Iraq
2016-04-01
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| Col·lecció: | Engineering and Technology Journal |
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| Accés en línia: | https://etj.uotechnology.edu.iq/article_116206_7a5ef31973dc87bb91730198fed0eabb.pdf |
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