Formulation of Ground States for 2DEG at Rough Surfaces and Application to Nonlinear Model of Surface Roughness Scattering in nMOSFETs

Electron mobility in extremely-thin-body (ETB) nanosheet channels and at cryogenic temperature is known to be dominated by surface roughness scattering. However, the conventional model of surface roughness scattering lacks accuracy because it requires the use of excessive roughness parameters to rep...

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Príomhchruthaitheoirí:	Kei Sumita, Min-Soo Kang, Kasidit Toprasertpong, Mitsuru Takenaka, Shinichi Takagi
Formáid:	Artigo
Teanga:	Inglês
Foilsithe / Cruthaithe:	IEEE 2023-01-01
Sraith:	IEEE Journal of the Electron Devices Society
Ábhair:	transistor (MOSFET) mobility nanosheet surface roughness scattering
Rochtain ar líne:	https://ieeexplore.ieee.org/document/10092790/
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