Silicon Field Effect Transistor as the Nonlinear Detector for Terahertz Autocorellators
We demonstrate that the rectifying field effect transistor, biased to the subthreshold regime, in a large signal regime exhibits a super-linear response to the incident terahertz (THz) power. This phenomenon can be exploited in a variety of experiments which exploit a nonlinear response, such as non...
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| Principais autores: | , , , |
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| 格式: | Artigo |
| 語言: | Inglês |
| 出版: |
MDPI AG
2018-11-01
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| 叢編: | Sensors |
| 主題: | |
| 在線閱讀: | https://www.mdpi.com/1424-8220/18/11/3735 |
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