Computational design of two‐dimensional MA2Z4 family field‐effect transistor for future Ångström‐scale CMOS technology nodes

Abstract Advancing complementary metal–oxide–semiconductor (CMOS) technology into the sub‐1‐nm Ångström‐scale technology nodes is expected to involve alternative semiconductor materials as silicon transistors encounter severe performance degradation at physical gate lengths below 10 nm. Two‐dimensio...

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Autors principals:	Che Chen Tho, Zongmeng Yang, Shibo Fang, Shiying Guo, Liemao Cao, Chit Siong Lau, Fei Liu, Shengli Zhang, Jing Lu, L. K. Ang, Lain‐Jong Li, Yee Sin Ang
Format:	Artigo
Idioma:	Inglês
Publicat:	Wiley 2026-02-01
Col·lecció:	InfoMat
Matèries:	2D semiconductors computational device design field‐effect transistors MoSi2N4 family NEGF simulations
Accés en línia:	https://doi.org/10.1002/inf2.70096
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