Parameters Design and Optimization of SiC MOSFET Driving Circuit with Consideration of Comprehensive Loss and Voltage Stress
In conventional parameters design, the driving circuit is usually simplified as an RLC second-order circuit, and the switching characteristics are optimized by selecting parameters, but the influence of switching characteristics on the driving circuit is not considered. In this paper, the insight me...
Gespeichert in:
| Hauptverfasser: | , , , , , |
|---|---|
| Format: | Artigo |
| Sprache: | Inglês |
| Veröffentlicht: |
MDPI AG
2023-02-01
|
| Schriftenreihe: | Micromachines |
| Schlagworte: | |
| Online-Zugang: | https://www.mdpi.com/2072-666X/14/3/505 |
| Tags: |
Keine Tags, Fügen Sie das erste Tag hinzu!
|