Strain-controlled Rashba spin-orbit coupling effect in SnS and SnSe monolayers
The miniaturization of transistors and the high density of integrated circuits makes conventional transistors reach a size limit, causing leakage currents, unstable performance, and increasing production cost. Spin field effect transistors (SFETs) based on spintronics use electron spin as an informa...
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| Principais autores: | , , , , |
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| Formato: | Artigo |
| Idioma: | Inglês |
| Publicado em: |
Elsevier
2021-11-01
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| coleção: | Materials & Design |
| Assuntos: | |
| Acesso em linha: | http://www.sciencedirect.com/science/article/pii/S0264127521005608 |
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