Calculation of transport properties of gamma-radiation detectors based on semi-insulating semiconductors

A method has been developed for the rapid determination of charge transport parameters in dosimetric γ-radiation detectors based on high-resistivity semiconductors. The problem of calculating charge transport parameters in planar γ-radiation detectors based on semi-insulating CdTe (CdZnTe) using the...

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Autori principali:	A. A. Zakharchenko, I. M. Prokhoretz, V. E. Kutny, A. V. Rybka, M. A. Khazhmuradov
Natura:	Artigo
Lingua:	Inglês
Pubblicazione:	Politekhperiodika 2008-06-01
Serie:	Технологія та конструювання в електронній апаратурі
Soggetti:	mobility lifetime semiconductor detectors semi-insulating semiconductors cdte cdznte hgi2 monte carlo method
Accesso online:	https://tkea.com.ua/index.php/journal/article/view/759
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