Distinct Lasing Operation From Chirped InAs/InP Quantum-Dash Laser

We study the enhanced inhomogeneity across the InAs quantum-dash (Qdash) layers by incorporating a chirped AlGaInAs barrier thickness in the InAs/InP laser structure. The lasing operation is investigated via Fabry-Pérot ridge-waveguide laser characterization, which shows a peculiar behavior...

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Bibliografiske detaljer

Principais autores:	M. Z. M. Khan, T. K. Ng, Chi-Sen Lee, D. H. Anjum, D. Cha, P. Bhattacharya, B. S. Ooi
Format:	Artigo
Sprog:	Inglês
Udgivet:	IEEE 2013-01-01
Serier:	IEEE Photonics Journal
Fag:	Semiconductor lasers semiconductor quantum dots quantum dash lasers self-assembled quantum dot inhomogeneous broadening
Online adgang:	https://ieeexplore.ieee.org/document/6557428/
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