Geometrical Anatomy for Oxygen Vacancies in Epitaxial Hf0.5Zr0.5O2 Films Grown via Atomic Layer Deposition

Abstract The selective influence of elastic strain on the formation of oxygen deficiencies in (001)‐, (110)‐, and (111)‐ epitaxial Hf0.5Zr0.5O2 films grown by using atomic layer deposition is reported. Optical spectroscopy, conducted using UV–vis spectroscopic ellipsometry on these Hf0.5Zr0.5O2 film...

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Hlavní autoři:	Chihwan An, Jung Woo Cho, Tae Yoon Lee, Myeong Seop Song, Baekjune Kang, Hongju Kim, Jun Hee Lee, Changhee Sohn, Seung Chul Chae
Médium:	Artigo
Jazyk:	Inglês
Vydáno:	Wiley-VCH 2025-04-01
Edice:	Advanced Materials Interfaces
Témata:	atomic layer deposition epitaxy hafnium oxide oxygen vacancies strain engineering
On-line přístup:	https://doi.org/10.1002/admi.202400742
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