Universal domain wall dynamics under electric field in Ta/CoFeB/MgO devices with perpendicular anisotropy
Domain walls in ferromagnetic–oxide structures can be moved using an electric field, which could be useful for low-power electronic devices. Here, the authors demonstrate the modulation of the velocity of these domain walls between a creep and a flow regime.
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| Principais autores: | , , , , , , , |
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| Formato: | Artigo |
| Idioma: | Inglês |
| Publicado em: |
Nature Portfolio
2016-11-01
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| coleção: | Nature Communications |
| Acesso em linha: | https://doi.org/10.1038/ncomms13532 |
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