Terahertz Antenna-Coupled Wire-Channel Field-Effect Transistors Based on AlGaN/GaN Heterostructures

We propose a terahertz (THz) antenna-coupled wire-channel field-effect transistor—modified EdgeFET (m-EdgeFET), formed by combining single-gate FinFET and dual-side-gate EdgeFET concepts, which is used for THz detection. The proposed hybrid design was implemented on AlGaN/GaN high-electron-mobility...

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Autores principales:	Maxim Moscotin, Justinas Jorudas, Pawel Prystawko, Miroslav Saniuk, Vitalij Kovalevskij, Irmantas Kašalynas
Formato:	Artigo
Lenguaje:	Inglês
Publicado:	MDPI AG 2026-04-01
Colección:	Sensors
Materias:	terahertz detection AlGaN/GaN HEMT antenna-coupled FET modified EdgeFET plasma-wave rectification TeraFET
Acceso en línea:	https://www.mdpi.com/1424-8220/26/9/2701
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