Design Technology Co-Optimization Strategy for Ge Fraction in SiGe Channel of SGOI FinFET
FinFET devices and Silicon-On-Insulator (SOI) devices are two mainstream technical routes after the planar MOSFET reached the limit for scaling. The SOI FinFET devices combine the benefits of FinFET and SOI devices, which can be further boosted by SiGe channels. In this work, we develop an optimizin...
Αποθηκεύτηκε σε:
| Κύριοι συγγραφείς: | , |
|---|---|
| Μορφή: | Artigo |
| Γλώσσα: | Inglês |
| Έκδοση: |
MDPI AG
2023-05-01
|
| Σειρά: | Nanomaterials |
| Θέματα: | |
| Διαθέσιμο Online: | https://www.mdpi.com/2079-4991/13/11/1709 |
| Ετικέτες: |
Δεν υπάρχουν, Καταχωρήστε ετικέτα πρώτοι!
|