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Multilayer ion trap technology for scalable quantum computing and quantum simulation

We present a novel ion trap fabrication method enabling the realization of multilayer ion traps scalable to an in principle arbitrary number of metal-dielectric levels. We benchmark our method by fabricating a multilayer ion trap with integrated three-dimensional microwave circuitry. We demonstrate...

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Bibliografiske detaljer
Principais autores: A Bautista-Salvador, G Zarantonello, H Hahn, A Preciado-Grijalva, J Morgner, M Wahnschaffe, C Ospelkaus
Format: Artigo
Sprog:Inglês
Udgivet: IOP Publishing 2019-01-01
Serier:New Journal of Physics
Fag:
Online adgang:https://doi.org/10.1088/1367-2630/ab0e46
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