Synergistic effect of tri-doping with Mn, Ge, and Bi and thermoelectric enhancement of SnTe induced by grain boundary engineering and nanostructuring

In this study, we propose grain boundary engineering and nanostructuring to enhance the thermoelectric performance of SnTe through tri-doping with Mn, Ge, and Bi. The synergistic effects on the band structure were analyzed through DFT calculations and validated through a series of doping experiments...

Täydet tiedot

Bibliografiset tiedot

Päätekijät:	Donghyun Shin, U. Sandhya Shenoy, Hyejeong Choi, Joseph Ngugi Kahiu, Eun-Ji Meang, Kwi-Il Park, Kwan-Ho Park, D. Krishna Bhat, Ho Seong Lee
Aineistotyyppi:	Artigo
Kieli:	Inglês
Julkaistu:	Elsevier 2026-03-01
Sarja:	Journal of Materiomics
Aiheet:	Grain boundary engineering Nano structuring Tri-doping Thermoelectric materials SnTe
Linkit:	http://www.sciencedirect.com/science/article/pii/S2352847825001091
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