Facile integration of electro-optic SiO2/ITO heterointerfaces in MIS structures for CMOS-compatible plasmonic waveguide modulation

By taking advantage of the absence of diffraction limit restrictions in plasmonic structures, strong modal confinement is made possible, paving the way for improved optical processes and miniaturized photonic circuit integration. Indium tin oxide (ITO) has emerged as a promising plasmonic material t...

Descripció completa

Dades bibliogràfiques

Autors principals:	Nasir Alfaraj, Charles Chih-Chin Lin, Sherif Nasif, Swati Rajput, Amr S. Helmy
Format:	Artigo
Idioma:	Inglês
Publicat:	Light Publishing Group 2024-02-01
Col·lecció:	Light: Advanced Manufacturing
Matèries:	indium tin oxide (ito) modulators oxide semiconductors plasmonics telecom frequency titanium nitride (tin)
Accés en línia:	https://www.light-am.com/article/doi/10.37188/lam.2023.038
Etiquetes:	Afegir etiqueta Sense etiquetes, Sigues el primer a etiquetar aquest registre!