Mapping of integrated PIN diodes with a 3D architecture by scanning microwave impedance microscopy and dynamic spectroscopy

This work addresses the need for a comprehensive methodology for nanoscale electrical testing dedicated to the analysis of both “front end of line” (FEOL) (doped semiconducting layers) and “back end of line” (BEOL) layers (metallization, trench dielectric, and isolation) of highly integrated microel...

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Detalhes bibliográficos

Principais autores:	Rosine Coq Germanicus, Peter De Wolf, Florent Lallemand, Catherine Bunel, Serge Bardy, Hugues Murray, Ulrike Lüders
Formato:	Artigo
Idioma:	Inglês
Publicado em:	Beilstein-Institut 2020-11-01
coleção:	Beilstein Journal of Nanotechnology
Assuntos:	atomic force microscopy (afm) datacube doping integrated pin diode nanoprobing scanning probe microscopy (spm) scanning microwave impedance microscopy (smim) spectroscopy
Acesso em linha:	https://doi.org/10.3762/bjnano.11.159
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