SnS/MoS2 van der Waals heterojunction for in‐plane ferroelectric field‐effect transistors with multibit memory and logic characteristics

Abstract Ferroelectric two dimensional (2D) materials hold great potential to develop modern miniaturized electronic and memory devices. 2D ferroelectrics exhibiting spontaneous polarization in the out‐of‐plane direction have been extensively investigated to date, but the loss of their polarization...

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Bibliographic Details

Main Authors:	Prashant Singh, Dongjoon Rhee, Sungpyo Baek, Hyun Ho Yoo, Jingjie Niu, Myeongjin Jung, Joohoon Kang, Sungjoo Lee
Format:	Artigo
Language:	Inglês
Published:	Wiley 2023-05-01
Series:	EcoMat
Subjects:	ferroelectrics field‐effect transistors memory devices two‐dimensional materials van der Waals heterojunction
Online Access:	https://doi.org/10.1002/eom2.12333
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