Pristine GaFeO3 Photoanodes with Surface Charge Transfer Efficiency of Almost Unity at 1.23 V for Photoelectrochemical Water Splitting

Abstract Oxide‐based photoelectrodes commonly generate deep trap states associated with various intrinsic defects such as vacancies, antisites, and dislocations, limiting their photoelectrochemical properties. Herein, it is reported that rhombohedral GaFeO3 (GFO) thin‐film photoanodes exhibit defect...

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Detalhes bibliográficos

Principais autores:	Xin Sun, Min Wang, Hai‐Fang Li, Linxing Meng, Xiao‐Jun Lv, Liang Li, Meicheng Li
Formato:	Artigo
Idioma:	Inglês
Publicado em:	Wiley 2023-03-01
coleção:	Advanced Science
Assuntos:	defect‐inactive photoanodes GaFeO3 thin films oxygen vacancy surface charge transfer surface recombination
Acesso em linha:	https://doi.org/10.1002/advs.202205907
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