Gain and Threshold Current in Type II In(As)Sb Mid-Infrared Quantum Dot Lasers
In this work, we improved the performance of mid-infrared type II InSb/InAs quantum dot (QD) laser diodes by incorporating a lattice-matched p-InAsSbP cladding layer. The resulting devices exhibited emission around 3.1 µm and operated up to 120 K in pulsed mode, which is the highest working temperat...
I tiakina i:
| Ngā kaituhi matua: | , , |
|---|---|
| Hōputu: | Artigo |
| Reo: | Inglês |
| I whakaputaina: |
MDPI AG
2015-04-01
|
| Rangatū: | Photonics |
| Ngā marau: | |
| Urunga tuihono: | http://www.mdpi.com/2304-6732/2/2/414 |
| Ngā Tūtohu: |
Kāore He Tūtohu, Me noho koe te mea tuatahi ki te tūtohu i tēnei pūkete!
|