Atom devices based on single dopants in silicon nanostructures

<p>Abstract</p> <p>Silicon field-effect transistors have now reached gate lengths of only a few tens of nanometers, containing a countable number of dopants in the channel. Such technological trend brought us to a research stage on devices working with one or a few dopant atoms. In this work, we rev...

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Бібліографічні деталі
Автори:	Jablonski Ryszard, Moraru Daniel, Udhiarto Arief, Anwar Miftahul, Nowak Roland, Hamid Earfan, Tarido Juli, Mizuno Takeshi, Tabe Michiharu
Формат:	Artigo
Мова:	Inglês
Опубліковано:	SpringerOpen 2011-01-01
Серія:	Nanoscale Research Letters
Предмети:	single-dopant electronics single-electron tunneling double-donor systems multiple-donor systems photon Kelvin probe force microscopy silicon-on-insulator field-effect transistor
Онлайн доступ:	http://www.nanoscalereslett.com/content/6/1/479
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Atom devices based on single dopants in silicon nanostructures

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