Improvement on the onset voltage for electroluminescent devices based in a SiOx/SiOy bilayer obtained by sputtering

This work is focused on the composition, optical and electroluminescent properties of silicon rich oxide (SiO _x , x < 2) films monolayers and bilayers (SiO _x /SiO _y ) deposited by Sputtering with silicon excess between 6.2 to 10.7 at.% were deposited on p-type (100) silicon substrates. As-deposit...

Täydet tiedot

Bibliografiset tiedot

Päätekijät:	A S L Salazar-Valdez, K Monfil-Leyva, F Morales-Morales, Z J Hernández Simón, A L Muñoz-Zurita, J A Luna López, J A D Hernández de la Luz, F Uribe González, A Morales-Sánchez
Aineistotyyppi:	Artigo
Kieli:	Inglês
Julkaistu:	IOP Publishing 2024-01-01
Sarja:	Materials Research Express
Aiheet:	electroluminescent devices SiOx/SiOy bilayer electroluminescence sputtering thin films
Linkit:	https://doi.org/10.1088/2053-1591/ad78ad
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