Theoretical insights into the role of defects in the optimization of the electrochemical capacitance of graphene

Graphene-based frameworks suffer from a low quantum capacitance due to graphene’s Dirac point at the Fermi level. This theoretical study investigated the effect structural defects, nitrogen and boron doping, and surface epoxy/hydroxy groups have on the electronic structure and capacitance of graphen...

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Autors principals:	Alex Aziz, Wei Yu, Rui Tang, Rachel Crespo-Otero, Devis Di Tommaso, Hirotomo Nishihara
Format:	Artigo
Idioma:	Inglês
Publicat:	Tsinghua University Press 2024-09-01
Col·lecció:	Energy Materials and Devices
Matèries:	implicit solvent models electrical double layer joint density functional theory graphene based supercapacitors quantum capacitance
Accés en línia:	https://www.sciopen.com/article/10.26599/EMD.2024.9370035
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