Influence of the rapid thermal treatment of the gate dielectric on the parameters of integrated circuits of time devices
The paper is dedicated to influence of the rapid thermal treatment of the gate dielectric at a temperature of ~1100 °С on the electrical parameters of the programmable time device with a correction of 512PS8. As the analyzed parameters of the given integrated circuit, the authors have selected break...
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| Hlavní autoři: | , , |
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| Médium: | Artigo |
| Jazyk: | Russo |
| Vydáno: |
Educational institution «Belarusian State University of Informatics and Radioelectronics»
2020-05-01
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| Edice: | Доклады Белорусского государственного университета информатики и радиоэлектроники |
| Témata: | |
| On-line přístup: | https://doklady.bsuir.by/jour/article/view/2664 |
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