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Excitons in Shallow GaAs/Al<sub>0.03</sub>Ga<sub>0.97</sub>As Quantum Wells

We report a comprehensive study of heavy-hole (HH) and light-hole (LH) excitons in a shallow GaAs/Al<sub>0.03</sub>Ga<sub>0.97</sub>As single quantum well (QW) using two-dimensional photoluminescence excitation (PLE) spectroscopy, reflectivity in Brewster geometry, and time-resolved four-wave mixing...

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Principais autores: Roman S. Nazarov, Matthew A. Maksimov, Yurii P. Efimov, Sergei A. Eliseev, Vyacheslav A. Lovcjus, Yury V. Kapitonov
Formato: Artigo
Idioma:Inglês
Publicado: MDPI AG 2025-12-01
Series:Photonics
Assuntos:
excitons
quantum wells
photoluminescence excitation spectroscopy
reflectivity
photon echo
Acceso en liña:https://www.mdpi.com/2304-6732/13/1/19
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