Investigation of a 4H-SiC Trench MOSFET with Back-Side Super Junction
In this paper, a 4H-SiC trench gate MOSFET, featuring a super junction layer located on the drain-region side, is presented to enhance the breakdown voltage and the figures of merit (FOM). The proposed structure is investigated and compared with the conventional structure with a 2D numerical simulat...
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| Autori principali: | , , , |
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| Natura: | Artigo |
| Lingua: | Inglês |
| Pubblicazione: |
MDPI AG
2022-10-01
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| Serie: | Micromachines |
| Soggetti: | |
| Accesso online: | https://www.mdpi.com/2072-666X/13/10/1770 |
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