Sensing Responses Based on Transfer Characteristics of InAs Nanowire Field-Effect Transistors
Nanowire-based field-effect transistors (FETs) have demonstrated considerable promise for a new generation of chemical and biological sensors. Indium arsenide (InAs), by virtue of its high electron mobility and intrinsic surface accumulation layer of electrons, holds properties beneficial for creati...
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| Principais autores: | , , , , , |
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| Format: | Artigo |
| Sprog: | Inglês |
| Udgivet: |
MDPI AG
2017-07-01
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| Serier: | Sensors |
| Fag: | |
| Online adgang: | https://www.mdpi.com/1424-8220/17/7/1640 |
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