Trench FinFET Nanostructure with Advanced Ferroelectric Nanomaterial HfZrO₂ for Sub-60-mV/Decade Subthreshold Slope for Low Power Application

Ferroelectric fin field-effect transistors with a trench structure (trench Fe-FinFETs) were fabricated and characterized. The inclusion of the trench structures improved the electrical characteristics of the Fe-FinFETs. Moreover, short channel effects were suppressed by completely surrounding the tr...

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Váldodahkkit:	Siao-Cheng Yan, Chen-Han Wu, Chong-Jhe Sun, Yi-Wen Lin, Yi-Ju Yao, Yung-Chun Wu
Materiálatiipa:	Artigo
Giella:	Inglês
Almmustuhtton:	MDPI AG 2022-06-01
Ráidu:	Nanomaterials
Fáttát:	FinFET FeFET hafnium zirconium oxide steep slope trench
Liŋkkat:	https://www.mdpi.com/2079-4991/12/13/2165
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