Study of silicon strain gauges under electron irradiation
The characteristics of semiconductor strain gauges based on boron doped р-type silicon whiskers under high energy electron irradiation were studied. Strain gauges were irradiated at room temperature by electrons with energies 4,2—14 MeV and different doses 5·1016—1·1018 el/cm2. The main parameters o...
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| Asıl Yazarlar: | , , , , , |
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| Materyal Türü: | Artigo |
| Dil: | Inglês |
| Baskı/Yayın Bilgisi: |
Politehperiodika
2010-02-01
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| Seri Bilgileri: | Tekhnologiya i Konstruirovanie v Elektronnoi Apparature |
| Konular: | |
| Online Erişim: | http://www.tkea.com.ua/tkea/2010/1_2010/pdf/07.zip |
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