Negative differential resistance and spectral characteristics of original and electron-irradiated (with E = 2 MeV) GaAs1-xPx LEDs
The electrophysical and radiation characteristics of the original and irradiated electrons with E = 2 MeV GaAsP light emitting diodes were studied. The results of measurements of current-current characteristics in the range of 77 - 300 K are given. In the range of 180 - 77 K, a region of negative di...
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| Autors principals: | , , , , , |
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| Format: | Artigo |
| Idioma: | Inglês |
| Publicat: |
Institute for Nuclear Research, National Academy of Sciences of Ukraine
2024-06-01
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| Col·lecció: | Ядерна фізика та енергетика |
| Matèries: | |
| Accés en línia: | https://jnpae.kinr.kyiv.ua/25.2/Articles_PDF/jnpae-2024-25-0125-Mosiuk.pdf |
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