Polarization Modulation on Charge Transfer and Band Structures of GaN/MoS₂ Polar Heterojunctions

As important third-generation semiconductors, wurtzite III nitrides have strong spontaneous and piezoelectric polarization effects. They can be used to construct multifunctional polar heterojunctions or quantum structures with other emerging two-dimensional (2D) semiconductors. Here, we investigate...

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Hlavní autoři:	Feng Tian, Delin Kong, Peng Qiu, Heng Liu, Xiaoli Zhu, Huiyun Wei, Yimeng Song, Hong Chen, Xinhe Zheng, Mingzeng Peng
Médium:	Artigo
Jazyk:	Inglês
Vydáno:	MDPI AG 2023-03-01
Edice:	Crystals
Témata:	GaN/MoS<sub>2</sub> polarization modulation charge transfer band alignment 3D/2D polar heterojunctions
On-line přístup:	https://www.mdpi.com/2073-4352/13/4/563
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