Effect of Strains and V-Shaped Pit Structures on the Performance of GaN-Based Light-Emitting Diodes

Strains and V-shaped pits are essential factors for determining the efficiency of GaN-based light-emitting diodes (LEDs). In this study, we systematically analyzed GaN LED structures on patterned sapphire substrates (PSSs) with two types of growth temperature employed for prestrained layers and thre...

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Egile Nagusiak:	Shuo-Wei Chen, Chia-Jui Chang, Tien-Chang Lu
Formatua:	Artigo
Hizkuntza:	Inglês
Argitaratua:	MDPI AG 2020-04-01
Saila:	Crystals
Gaiak:	GaN light emitting diodes V-shaped pits strain
Sarrera elektronikoa:	https://www.mdpi.com/2073-4352/10/4/311
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