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NiO/Ga<sub>2</sub>O<sub>3</sub> Vertical Rectifiers of 7 kV and 1 mm<sup>2</sup> with 5.5 A Forward Conduction Current

In this study, we present the fabrication and characterization of vertically oriented NiO/β polymorph n-Ga<sub>2</sub>O<sub>3</sub>/n+ Ga<sub>2</sub>O<sub>3</sub> heterojunction rectifiers featuring a substantial area of 1 mm<sup>2</sup>. A dual-layer SiN<sub>X</sub>/SiO<sub>2</sub> dielectric field...

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Bibliografski detalji
Glavni autori: Jian-Sian Li, Hsiao-Hsuan Wan, Chao-Ching Chiang, Timothy Jinsoo Yoo, Fan Ren, Honggyu Kim, Stephen J. Pearton
Format: Artigo
Jezik:Inglês
Izdano: MDPI AG 2023-11-01
Serija:Crystals
Teme:
Online pristup:https://www.mdpi.com/2073-4352/13/12/1624
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