Theory of the Thermal Stability of Silicon Vacancies and Interstitials in 4H–SiC
This paper presents a theoretical study of the electronic and dynamic properties of silicon vacancies and self-interstitials in 4H–SiC using hybrid density functional methods. Several pending issues, mostly related to the thermal stability of this defect, are addressed. The silicon site vacancy and...
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| Format: | Artigo |
| Idioma: | Inglês |
| Publicat: |
MDPI AG
2021-02-01
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| Col·lecció: | Crystals |
| Matèries: | |
| Accés en línia: | https://www.mdpi.com/2073-4352/11/2/167 |
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