Inverted n–p junction 940‐nm vertical‐cavity surface‐emitting laser arrays consisting of 875 devices on p‐GaAs substrate

Abstract The authors demonstrate a large‐area vertical‐cavity surface‐emitting laser (VCSEL) 25 × 35 array on a p‐type GaAs substrate with an emission wavelength of ∼940 nm and optical output power > 1 W, using an inverted junction (n‐up) epitaxial structure for emerging sensing applications. The el...

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Bibliografiske detaljer

Principais autores:	Yong Gyeong Lee, Sara Pouladi, Nam‐In Kim, Mina Moradnia, Jaekyun Kim, Keon Hwa Lee, Jae‐Hyun Ryou
Format:	Artigo
Sprog:	Inglês
Udgivet:	Wiley 2024-05-01
Serier:	Electronics Letters
Fag:	dislocation density gallium arsenide semiconductor laser arrays semiconductor lasers sensors
Online adgang:	https://doi.org/10.1049/ell2.13166
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