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Multilayers of InGaAs Nanostructures Grown on GaAs(210) Substrates

<p>Abstract</p> <p>Multilayers of InGaAs nanostructures are grown on GaAs(210) by molecular beam epitaxy. With reducing the thickness of GaAs interlayer spacer, a transition from InGaAs quantum dashes to arrow-like nanostructures is observed by atomic force microscopy. Photoluminescence measurements...

Ausführliche Beschreibung

Gespeichert in:
Hauptverfasser: Wang Zhiming, Xie Yanze, Kunets Vasyl, Dorogan Vitaliy, Mazur Yuriy, Salamo Gregory
Format: Artigo
Sprache:Inglês
Veröffentlicht: SpringerOpen 2010-01-01
Schriftenreihe:Nanoscale Research Letters
Schlagworte:
Molecular beam epitaxy
InGaAs nanostructures
GaAs(210)
Lateral ordering
Online-Zugang:http://dx.doi.org/10.1007/s11671-010-9645-7
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