Study of the Charge Carrier Collection Coefficient of Silicon p-i-n Photodiodes
The paper investigates the collection coefficient of minority charge carriers in silicon p-i-n photodiodes and the influence of certain technological factors on it. It has been found that the diffusion length of minority charge carriers and the resistivity of the material have a significant effect o...
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| Autors principals: | , |
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| Format: | Artigo |
| Idioma: | Inglês |
| Publicat: |
V.N. Karazin Kharkiv National University Publishing
2024-03-01
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| Col·lecció: | East European Journal of Physics |
| Matèries: | |
| Accés en línia: | https://periodicals.karazin.ua/eejp/article/view/23076 |
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