Dual-Doped Cylindrical Bit-Line Pad for High-Efficiency Bulk Erase in V-NAND Flash
We propose a novel dual-doped cylindrical bit-line (DDC-BL) pad structure for vertical NAND (V-NAND) flash memory to enable efficient bulk erase operation through direct hole injection. Unlike the conventional gate-induced drain leakage (GIDL) erase method, which relies on band-to-band tunneling nea...
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| Principais autores: | , , , , |
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| Formato: | Artigo |
| Idioma: | Inglês |
| Publicado: |
IEEE
2026-01-01
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| Series: | IEEE Access |
| Assuntos: | |
| Acceso en liña: | https://ieeexplore.ieee.org/document/11359687/ |
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