Large Active Area, Low Capacitance Multi-Dot PIN Photodiode in 0.35 m CMOS Technology<inline-formula><tex-math notation="LaTeX"/></inline-formula>
This article presents a multi-dot PIN photodiode structure that addresses the inherent trade-off between the light-sensitive area and capacitance in conventional planar photodiodes commonly used in optical communication systems. This structure is a combination of several connected cathode dots and w...
Kaydedildi:
| Asıl Yazarlar: | , , , |
|---|---|
| Materyal Türü: | Artigo |
| Dil: | Inglês |
| Baskı/Yayın Bilgisi: |
IEEE
2024-01-01
|
| Seri Bilgileri: | IEEE Photonics Journal |
| Konular: | |
| Online Erişim: | https://ieeexplore.ieee.org/document/10336890/ |
| Etiketler: |
Etiket eklenmemiş, İlk siz ekleyin!
|
